Thermal boundary conductance of CVD-grown MoS₂ monolayer-on-silica substrate determined by scanning thermal microscopy

We characterize heat dissipation of supported molybdenum disulfide (MoS 2 ) monolayers grown by chemical vapor deposition means ambient-condition scanning thermal microscopy (SThM). find that the boundary conductance MoS in contact with 300 nm SiO is around 4.6 ± MW m ?2 K ?1 . This value low range values determined for exfoliated flakes other techniques such as Raman thermometry, which span an order magnitude (0.44–50 ), and underlines dispersion measurements. The sensitivity to in-plane conductivity very low, highlighting key driver monolayer when it not suspended. In addition, this work also demonstrates SThM calibration using different thicknesses , initially aimed at being used bulk materials can be extended 2D materials.